دیتاشیت PSMN1R6-30MLHX
مشخصات دیتاشیت
| نام دیتاشیت |
PSMN1R6-30MLHX
|
| حجم فایل |
71.009
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Nexperia PSMN1R6-30MLHX
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
106W
-
Total Gate Charge (Qg@Vgs):
41nC@10V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
2369pF@15V
-
Continuous Drain Current (Id):
160A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.2V@1mA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.9mΩ@25A,10V
-
Package:
SOT-1210
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Manufacturer:
Nexperia
